Metal-polymer Schottky barriers on processible polymers
We present the results of a study of strong rectification by metal-polymer (Schottky) diodes made by evaporating metal contacts onto films of a soluble semiconducting polymer cast from solution. Poly(3-hexylthiophene), a soluble alkyl derivative of poly(thiophene), and indium contacts form the Schottky diodes. Current-voltage characteristics exhibit rectification ratios in the range 100:1 to 1000:1; the forward current increases exponentially over several decades, whereas a relatively small leakage current flows under reverse bias. Temperature dependence of the current-voltage characteristics differs from that of conventional Schottky diodes and suggests transport processes other than conventional thermionic emission.
Tomozawa, H, D Braun, S.D Phillips, R Worland, A.J Heeger, and H Kroemer. "Metal-polymer Schottky Barriers on Processible Polymers." Synthetic Metals. 28 (1989): 687-690. Print.